[1]汝丽丽,孟月东,陈龙威.氦等离子体前处理对多晶硅薄膜性能的影响[J].深圳大学学报理工版,2013,30(No.4(331-440)):398-403.[doi:10.3724/SP.J.1249.2013.04398]
 Ru Lili,Meng Yuedong,and Chen Longwei.Influence of Helium plasma pre-treatment on properties of polycrystalline silicon films[J].Journal of Shenzhen University Science and Engineering,2013,30(No.4(331-440)):398-403.[doi:10.3724/SP.J.1249.2013.04398]
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氦等离子体前处理对多晶硅薄膜性能的影响()
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《深圳大学学报理工版》[ISSN:1000-2618/CN:44-1401/N]

卷:
第30卷
期数:
2013年No.4(331-440)
页码:
398-403
栏目:
材料科学
出版日期:
2013-07-12

文章信息/Info

Title:
Influence of Helium plasma pre-treatment on properties of polycrystalline silicon films
文章编号:
20130409
作者:
汝丽丽123孟月东12陈龙威12
1)中国科学院合肥物质研究院等离子体所,合肥 230031
2)中国科学院大学合肥物质科学研究院,合肥 230031
3)深圳大学-中国科学院等离子体物理研究所联合应用等离子体实验室,深圳 518060
Author(s):
Ru Lili123 Meng Yuedong12 and Chen Longwei12
1) Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, P.R.China
2) Hefei Institute of Physical Science, University of Chinese Academy of Sciences, Hefei 230031, P.R.China
3) SZU-IPPCAS Joint Lab for Applied Plasma, Shenzhen 518060, P.R.China
关键词:
等离子体物理多晶硅薄膜电子回旋共振等离子体增强氦等离子体磁控溅射化学气相沉积薄膜结晶度纳米材料
Keywords:
plasma polycrystalline silicon thin films electron cyclotron resonance plasma enhanced helium plasma magnetron sputtering chemical vapor deposition film crystallinity nanomaterials
分类号:
O 539;O 782+.7
DOI:
10.3724/SP.J.1249.2013.04398
文献标志码:
A
摘要:
采用微波电子回旋共振等离子体增强磁控溅射(microwave electron cyclotron resonance plasma-enhanced magnetron sputtering, ECR-PEMS)和电子回旋共振等离子体辅助化学气相沉积(microwave electron cyclotron resonance chemical vapor deposition, ECR-CVD)技术,分别在单晶硅片(100)基底上低温制备了多晶硅薄膜.采用拉曼光谱仪、X射线衍射仪以及原子力显微镜对薄膜微观结构及表面形貌进行表征,研究纯氦等离子体基底前期处理对所沉积薄膜性能的影响.结果表明,氦等离子体前处理技术能大幅提高多晶硅薄膜结晶度和颗粒尺寸,明显改善ECR-CVD法所得多晶硅薄膜的微观结构特性和表面形貌.
Abstract:
Polycrystalline silicon thin films deposited on p-type (100) silicon wafer substrates were prepared by means of microwave electron cyclotron resonance plasma-enhanced magnetron sputtering (ECR-PEMS) and microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low temperatures in the present work.To characterize the microstructure and surface morphology of the films, the Raman spectroscopy, X-ray diffraction and atomic force microscopy were used.The study focuses on the effect of pure helium plasma substrate pre-treatment on the deposited film properties.The results show that the film crystallinity and grain size are obviously enhanced by the helium plasma pre-treatment in both deposition processes.At the same time, the microstructure and surface morphology of polycrystalline silicon film with ECR-CVD are improved.

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备注/Memo

备注/Memo:
Received:2013-04-08;Accepted:2013-05-18
Foundation:Foundation for Distinguished Young Talents in Higher Education of Guangdong (2012LYM0115); Shenzhen Technology Research Foundation for Basic Project (JC201005280485A)
Corresponding author:Research fellow Meng Yuedong. E-mail: ydmeng@ipp.ac.cn
Citation:Ru Lili,Meng Yuedong,Chen Longwei.Influence of Helium plasma pre-treatment on properties of polycrystalline silicon films[J]. Journal of Shenzhen University Science and Engineering, 2013, 30(4): 398-403.(in Chinese)
基金项目:广东高校优秀青年创新人才培育计划资助项目 (2012LYM_0115); 深圳市科技基础研究资助项目(JC201105170703A)
作者简介:汝丽丽(1984-),女(汉族),安徽省淮南市人,中国科学院大学博士研究生.E-mail:rulily@szu.edu.cn
引文:汝丽丽,孟月东,陈龙威.氦等离子体前处理对多晶硅薄膜性能的影响[J]. 深圳大学学报理工版,2013,30(4):398-403.
更新日期/Last Update: 2013-07-12